Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature
نویسندگان
چکیده
We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects diode design, current and temperature. The as-grown regrown with without surface treatment have been studied. in most devices had a characteristic 1/f spectrum at high moderate currents, while some revealed generation-recombination bulges low currents (f is frequency). predominant trend spectral density, S, dependence was S ~ I. All tested diodes rather normalized densities 10^-18 cm2/Hz -- 10^-16 (f=10 Hz) density J=1 A/cm2 room temperature dependences different peaks T=375 K 400 K. Temperature, current, frequency suggest that mechanism recombination origin. argue measurements can be used to efficiently assess quality diodes.
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2021
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0075498